PART |
Description |
Maker |
E0C63P366 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU,RAM,Rewritable ROM,Segment LCD Driver,On-Board Writing
|
爱普生(中国)有限公
|
E0C63B07 |
CMOS 4-Bit Low Voltage Singl Single Chip Microcomputer Composed of 4-Bit E0C63000 Core CPU,RAM,ROM7 Segment Type LCD Driver0000 Gates of Gate Array(4位CMOS、低电压、单片微型计算机(含4位E0C63000中央处理器核RAM,ROM7段LCD驱动器,10000门阵列))
|
爱普生(中国)有限公
|
HYS64V64220GU HYS72V64220GU |
3.3 V 64M 64-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块) 3.3 V 64M 72-Bit SDRAM Modules(3.3 V 64M 64/72-Bit 2 个存储体SDRAM 模块)
|
SIEMENS AG
|
MB82DP04183C-65LWFKT |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
K9K1G16U0A |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory 128M的8 64米16位NAND闪存
|
Samsung Semiconductor Co., Ltd.
|
MB82DP04184E-65LTBG |
64M Bit (4 M word × 16 bit) Mobile Phone Application Specific Memory
|
Fujitsu Component Limited.
|
MX23C6410 23C6410 |
64M-BIT Mask ROM (8/16 Bit Output) From old datasheet system
|
Macronix 旺宏
|
MX23C6422 23C6422 |
64M-BIT MASK ROM (16/32 BIT OUTPUT) From old datasheet system
|
Macronix 旺宏
|
K9K1G08U0A K9K1G08U0A1 K9K1G16U0A K9K1G08Q0A K9K1G |
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
|
Samsung Electronic SAMSUNG[Samsung semiconductor]
|
K9F1208U0A K9F1216U0A |
64M x 8 Bit , 32M x 16 Bit NAND Flash Memory
|
SAMSUNG[Samsung semiconductor]
|
MC-4R64CPE6C-653 MC-4R64CPE6C-745 MC-4R64CPE6C MC- |
Direct Rambus DRAM RIMM Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus?/a> DRAM RIMM?/a> Module 64M-BYTE (32M-WORD x 16-BIT) Direct Rambus垄芒 DRAM RIMM垄芒 Module 64M-BYTE (32M-WORD x 16-BIT)
|
http:// Elpida Memory
|
M390S6450BT1 |
64M x 72 SDRAM DIMM with PLL & Register based on 64M x 4, 4Banks, 8K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
|
Samsung Electronic
|